smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter features high breakdown voltage adoption of mbit process excellent h fe linearity absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 400 v collector to emitter voltage v ceo 400 v emitter to base voltage v ebo 5v collector current (dc) i c 200 ma collector current (pulse) i cp 400 ma total power dissipation ta = 25 1w t c =25 10 w junction temperature t j 150 storage temperature t stg -55to+150 p c sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SC4003 product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =300v,i e =0 0.1 a emitter cutoff current i ebo v eb =4v,i c =0 0.1 a dc current gain h fe v ce =10v,i c =50ma 60 200 gain-bandwidth product ft v ce =30v,i c =10ma 70 mhz c-e saturation voltage v ce(sat) i c =50ma,i b =5ma 0.6 v b-e saturation voltage v be(sat) i c =50ma,i b =5ma 1.0 v c-b breakdown voltage v (br)cbo i c =10a,i e =0 400 v c-e breakdown voltage v (br)ceo i c =1ma,r be = 400 v e-b breakdown voltage v (br)ebo i e =10a,i c =0 5 v output capacitance c ob v cb =30v,f=1mhz 4pf reverse transfer capacitance c re v cb =30v,f=1mhz 3pf turn-on time t on 0.25 s turn-off time t off 5s see specified test circuit h fe classification marking d e hfe 60 to 120 100 to 200 2SC4003 switching time test circuit sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
|
